Samsung creates 8GB DDR3 DRAM using 3D-TSV technology

Samsung has developed a new 8GB RDIMM memory module using three-dimensional (3D) chip stacking technology. The stacking technology which is also known as ‘through silicon via’ (TSV) helps to save up to 40 percent of power as compared to a conventional RDIMM module whereas at the same time increase the DRAM density by more than 50 percent.

“The TSV technology fabricates micron-sized holes through the silicon vertically, with a copper filling. By using the ‘through silicon via’ bonding process instead of conventional wire bonding, signal lines are shortened significantly, enabling the multi-stacked chip to function at levels comparable to a single silicon chip.”

Samsung says their major customers have successfully tested the module and considers the new 40nm-class DRAM modules a perfect fit for next-generation servers.

Samsung will develop a 30nm-class module in the near future and expects the use of 3D-TSV to rise from 2012.

[Via Samsung Hub]

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