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You are here: Home / Hardware / Samsung develops Mobile DRAM with wide I/O interface

Samsung develops Mobile DRAM with wide I/O interface

February 21, 2011 By Kunal Gangar Leave a Comment

Mobile DRAM

 

Samsung has announced the development of a new mobile DRAM for next-generation smartphones and tablet PCs. The new 1 Gigabit (Gb) Mobile DRAM is based on 50nm-class process that adopts a wide I/O interface and can transmit data at up to 12.8GB (Gigabyte) per second.

Samsung’s DRAM now boasts bandwidth eight times more than regular mobile DRAM while reducing power consumption by almost 87 percent.

Samsung says faster data transmission speeds are a result of the use of 512 pins for data input and output as compared to previous mobile DRAMs that uses a maximum of 32 pins.

Samsung plans to develop a 4Gb I/O mobile DRAM based on 20nm-process by 2013.

[Via Samsung Hub]

  • Samsung unveils faster and better Exynos 5 Octa
  • Samsung develops PCIe-based SSD for ultrathin notebooks
  • Exynos 5 Octa – Eight-core processor for mobile devices from Samsung
  • Samsung will show flexible displays at CES 2013

Filed Under: Hardware

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