Samsung develops 30nm-based DDR3 RAM

Samsung today unveiled industry’s first DDR3 RAM using the 30nm-class process technology. The 2 gigabit (Gb) memory module has successfully completed customer evaluations and is claimed to increase productivity while reducing power consumption.

Mass production of these RAMs is expected in the second half of this year and when applied with the 30nm process tech, it helps to increase productivity by 60 percent over 40nm DDR3 RAM as well as reduce power consumption by up to 30 percent over a 50nm DDR3 module.

Samsung reckons 30nm DDR3 modules will be used in most future computing products ranging from servers to desktops to laptops and other mobile devices.

Note: This post has been republished from Samsung Hub. For more Samsung news, head over to Samsung Hub.

• Samsung creates 40nm 4Gb DDR3 RAM
• Samsung to begin mass producing 40nm based 2Gb DDR3 RAM
• Samsung will show flexible displays at CES 2013
• Samsung develops 2GB LPDDR3 RAM and 128GB NAND Flash for Mobile Devices