Going by the recent developments, we’re going to see some powerful devices coming out by next year. Samsung has confirmed to have started mass production of the 2GB low power DDR3 RAM for mobile devices. The 30nm RAM is said to be 50 percent faster than the current LPDDR2 RAM and achieves a data […]
Samsung and Toshiba to support toggle DDR 2.0 NAND specification
Samsung and Toshiba have agreed to develop a high-performance NAND flash memory that will use toggle DDR 2.0 specification with 400Mbps interface. The new NAND memory is said to be beneficial to NAND-based consumer electronics goods and both Samsung as well as Toshiba will support it to allow broad-scale adoption amongst NAND vendors and […]
Toshiba develops industry’s highest 128GB NAND flash memory
Toshiba has announced industry’s highest storage NAND flash module that is used in various consumer electronics items like cellphones, music players, tablets etc. Toshiba has increased the capacity to a whopping 128GB and the module is created using sixteen 64Gbit (about 8GB) NAND chips fabricated with 32nm process. The memory module is compatible with […]
Samsung creates 20nm NAND Flash for use in memory cards
Samsung has announced the industry’s first 20nm-based NAND flash chips aimed to use in SD memory cards and embedded memory solutions. Samsung says memory cards based on this process tech give faster write and read speeds. Samsung had created 30nm-based NAND flash a year before and today these 20nm MLC NAND touts to give […]
Intel and Micron create world’s smallest NAND using 25nm-process
Intel and Micron’s joint venture, IM Flash Technologies (IMFT) has achieved a major breakthrough by developing the world’s first 25nm-based NAND flash. Using the 25nm process technology, Intel believes the NAND can give consumer electronics manufacturers a way to integrate larger amounts of storage in a cost-effective manner. Intel and Micron has developed an […]
Toshiba develops 64GB embedded NAND flash module
Toshiba has pulled out an industry first by unveiling a 64GB embedded NAND flash memory module. The new modules are fabricated with 32nm process technology and embeds sixteen 32Gbit (or 4GB) NAND chips to achieve huge storage in a small 30 micrometers thick profile. The chips also integrate a dedicated controller, has a sequential […]
Samsung starts production of 30nm 3-bit MLC NAND & asynchronous DDR NAND flash
Samsung is trying to strengthen its position in the NAND memory market by starting mass production of industry’s first 30nm-based 3-bit Multi Level Cell (MLC) NAND chips and 30nm-based asynchronous DDR NAND flash. Samsung claims the 3-bit MLC NAND increases the efficiency of the data storage by 50 percent compared to current 2-bit MLC […]
Samsung creates a 0.6mm thick 32GB memory chip
Samsung has developed the world’s thinnest multi-die memory package that is just 0.6mm thick and packs a whopping 32GB of storage. The new memory package is 40 percent thinner and lighter compared to the conventional memory packages stacked with eight chips. The ultra-thin package consists of eight dies (chips) of 4GB NAND flash that […]
Intel and Micron develops 3-bit-per-cell NAND
Intel in conjunction with Micron have developed a 3-bit-per-cell (3bpc) NAND technology fabricated with 34nm. This breakthrough has made it possible for them to create the industry’s smallest and cost-effective 32-gigabit (Gb) chip that can be used in storage devices like USB drives and flash cards. The 3bpc on 34nm NAND is important for […]
Micron produces 34nm NAND flash memory
Micron is now mass producing its new generation NAND flash memory that uses 34nm process technology. Lexar Media, subsidiary of Micron is the first company to gain advantage of this tech who will integrate these NANDs in their 32GB Platinum II SDHC and 16GB microSDHC cards. Micron’s 16- and 32-Gigabit (Gb) MLC NAND chips […]