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Samsung starts production of 30nm 3-bit MLC NAND & asynchronous DDR NAND flash

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3-bit-mlc

 

Samsung is trying to strengthen its position in the NAND memory market by starting mass production of industry’s first 30nm-based 3-bit Multi Level Cell (MLC) NAND chips and 30nm-based asynchronous DDR NAND flash.

Samsung claims the 3-bit MLC NAND increases the efficiency of the data storage by 50 percent compared to current 2-bit MLC NAND chips. Samsung will initially develop an 8GB microSD card using these chips in NAND flash modules.

32Gb DDR NAND

The Korean giant also kicked off volume production of 32Gb asynchronous DDR MLC NAND flash. The new NAND flash can be used in SSDs, premium memory cards, PMPs etc. and enhance the read performance of mobile devices. The DDR MLC NAND flash can read up to 133Mbps opposed to SDR-based NAND flash’s 40Mbps speed.

Press Release

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