Last year Samsung introduced 8GB NAND flash memory fabricated in 60nm and now they have announced the mass production of 16GB NAND flash based memories fabricated in 51nm which are the world’s first. These chips can be produced 60% more efficiently than the 60nm ones and are based on multi level structure. With the inclusion of MLC and 51nm fabrication, the memory can now read and write at a much faster speed. The new memory can write at 8MB/second and read at 30MB/second which is almost double than the 60nm NAND flash.
[Via SamsungHub]
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