Samsung has developed the next generation of non-volatile memory – PRAM. Touted as the next big thing to happen to memory, the PRAM stands for Phase-change Random Access Memory. Samsung developed the first prototype of a PRAM chip with 512MB capacity.
PRAM can rewrite data without having to first erase the previously accumulated data and is effectively 30x faster than conventional flash memory. The lifespan of PRAM is also approximately 10 times more than the flash memory. PRAM will be made available commercially sometime in 2008.
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