Samsung and Toshiba have agreed to develop a high-performance NAND flash memory that will use toggle DDR 2.0 specification with 400Mbps interface. The new NAND memory is said to be beneficial to NAND-based consumer electronics goods and both Samsung as well as Toshiba will support it to allow broad-scale adoption amongst NAND vendors and customers.

The new toggle DDR 2.0 spec provides a three-fold increase over toggle DDR 1.0 (133Mbps) and a ten-fold increase over SDR NAND (40Mbps).

Note: This post has been republished from Samsung Hub. For more Samsung news, head over to Samsung Hub.

Toshiba has announced industry’s highest storage NAND flash module that is used in various consumer electronics items like cellphones, music players, tablets etc. Toshiba has increased the capacity to a whopping 128GB and the module is created using sixteen 64Gbit (about 8GB) NAND chips fabricated with 32nm process.

The memory module is compatible with JEDEC e-MMC standard and boasts sequential read/write of 55/21MB per secs respectively.

Toshiba will begin sampling in September while the mass production is expected to start in Q4 2010.

Press Release

Samsung has announced the industry’s first 20nm-based NAND flash chips aimed to use in SD memory cards and embedded memory solutions. Samsung says memory cards based on this process tech give faster write and read speeds.

Samsung had created 30nm-based NAND flash a year before and today these 20nm MLC NAND touts to give 50 percent higher productivity than 30nm MLC NAND and has a read speed of 20MB/s whereas the write speed stood at around 10MB/s.

Samsung is currently sampling the cards to its customers and will be available in capacities ranging from 4GB to 64GB.

Note: This post has been republished from Samsung Hub. For more Samsung news, head over to Samsung Hub.

Intel and Micron’s joint venture, IM Flash Technologies (IMFT) has achieved a major breakthrough by developing the world’s first 25nm-based NAND flash. Using the 25nm process technology, Intel believes the NAND can give consumer electronics manufacturers a way to integrate larger amounts of storage in a cost-effective manner.

Intel and Micron has developed an 8GB 25nm-based NAND flash and measures just 167mm², which if we measure, is small enough to fit in the CD hole in the center.

IMFT is currently sampling the NAND and is expected to enter mass production in Q2 2010.

Press Release

Toshiba has pulled out an industry first by unveiling a 64GB embedded NAND flash memory module. The new modules are fabricated with 32nm process technology and embeds sixteen 32Gbit (or 4GB) NAND chips to achieve huge storage in a small 30 micrometers thick profile. The chips also integrate a dedicated controller, has a sequential read/write speed of 37/20 MB/second and are compliant with the latest e-MMC and JEDEC/MMCA 4.4 standard.

The modules come in storage sizes from 2GB to 64GB and will be available from Q1 2010.

Press Release

Samsung is trying to strengthen its position in the NAND memory market by starting mass production of industry’s first 30nm-based 3-bit Multi Level Cell (MLC) NAND chips and 30nm-based asynchronous DDR NAND flash.

Samsung claims the 3-bit MLC NAND increases the efficiency of the data storage by 50 percent compared to current 2-bit MLC NAND chips. Samsung will initially develop an 8GB microSD card using these chips in NAND flash modules.

The Korean giant also kicked off volume production of 32Gb asynchronous DDR MLC NAND flash. The new NAND flash can be used in SSDs, premium memory cards, PMPs etc. and enhance the read performance of mobile devices. The DDR MLC NAND flash can read up to 133Mbps opposed to SDR-based NAND flash’s 40Mbps speed.

Press Release

Samsung has developed the world’s thinnest multi-die memory package that is just 0.6mm thick and packs a whopping 32GB of storage. The new memory package is 40 percent thinner and lighter compared to the conventional memory packages stacked with eight chips. The ultra-thin package consists of eight dies (chips) of 4GB NAND flash that are stacked together using 30nm process and potentially allows to double the storage in the same form factor. Most devices use chips measuring 30um but the latest memory package from Samsung measures just 15um.

No word on the mass production or the tentative price.

Intel in conjunction with Micron have developed a 3-bit-per-cell (3bpc) NAND technology fabricated with 34nm. This breakthrough has made it possible for them to create the industry’s smallest and cost-effective 32-gigabit (Gb) chip that can be used in storage devices like USB drives and flash cards.

The 3bpc on 34nm NAND is important for both the companies as it will pave way for further NAND shrinks. They’ve also confirmed to launch 2xnm process later this year.

The 3bpc 32Gb NAND chip will go under mass production in the last quarter of this year.

Press Release

Micron is now mass producing its new generation NAND flash memory that uses 34nm process technology. Lexar Media, subsidiary of Micron is the first company to gain advantage of this tech who will integrate these NANDs in their 32GB Platinum II SDHC and 16GB microSDHC cards.

Micron’s 16- and 32-Gigabit (Gb) MLC NAND chips feature ONFI 2.1 synchronous interface that allows the chip to attain transfer speeds of up to 200MB/s, which is five times faster than a conventional SLC based NAND.

Micron is also sampling its 8- and 16Gb SLC NAND chips using the 34nm process.

Press Release

The mass production of the 32Gb (4GB) NAND flash will initiate from July, which is two months before than the scheduled month while the 16Gb (2GB) flash chip will already make its way into the market by that time.

Toshiba