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Samsung starts production of 30nm 3-bit MLC NAND & asynchronous DDR NAND flash

Samsung starts production of 30nm 3-bit MLC NAND & asynchronous DDR NAND flash

  Samsung is trying to strengthen its position in the NAND memory market by starting mass production of industry’s first 30nm-based 3-bit Multi Level Cell (MLC) NAND chips and 30nm-based asynchronous DDR NAND flash. Samsung claims the 3-bit MLC NAND increases the efficiency of the data storage by 50 percent compared to current 2-bit MLC [...]