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Samsung and Toshiba have agreed to develop a high-performance NAND flash memory that will use toggle DDR 2.0 specification with 400Mbps interface. The new NAND memory is said to be beneficial to NAND-based consumer electronics goods and both Samsung as well as Toshiba will support it to allow broad-scale adoption amongst NAND vendors and customers.

The new toggle DDR 2.0 spec provides a three-fold increase over toggle DDR 1.0 (133Mbps) and a ten-fold increase over SDR NAND (40Mbps).

Note: This post has been republished from Samsung Hub. For more Samsung news, head over to Samsung Hub.