Flash memory give way to PRAM
(No Ratings Yet)
Loading ...
Samsung has developed the next generation of non-volatile memory – PRAM. Touted as the next big thing to happen to memory, the PRAM stands for Phase-change Random Access Memory. Samsung developed the first prototype of a PRAM chip with 512MB capacity.
PRAM can rewrite data without having to first erase the previously accumulated data and is effectively 30x faster than conventional flash memory. The lifespan of PRAM is also approximately 10 times more than the flash memory. PRAM will be made available commercially sometime in 2008.
Liked the post? Why not Subscribe to our RSS Feed.
Dec 12th, 2006 at 9:10 pm
[...] Samsung showed us its development on the successor of flash memory. It was 30x faster and more reliable than flash memory. But now a consortium of companies namely IBM, Macronix and Qimonda are developing a storage device which will make the flash memory a thing of the past. The prototype device will be exhibited at the IEEE conference in San Francisco. It boasts phase-change memory which helps it to be 500 times more faster than its flash counterpart and consuming less than one half the power. All this can be achieved even when it is scaled down up to 22-nanometer node. [...]